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KM29V16000ARS - 2M X 8 BIT NAN FLASH MEMORY

KM29V16000ARS_511258.PDF Datasheet


 Full text search : 2M X 8 BIT NAN FLASH MEMORY


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S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
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Mitsubishi Electric Corporation
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A82DL16X4T A82DL1624 A82DL1624TG-70 A82DL1624TG-70 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
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EN29GL064AT-70TIP EN29GL064AB-70BIP EN29GL064AT-70 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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AM41PDS3224D 32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步)
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Advanced Micro Devices
 
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